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1.55 mu m GaInNAs resonant-cavity-enhanced photodetector grown on GaAs
- Han, Q.*; Yang, X.H.; Niu, Z.C.; Ni, H.Q.; Xu, Y.Q.; Zhang, S.Y.; Du, Y.; Peng, L.H.; Zhao, H.; Tong, C.Z.; Wu, R.H.; Wang, Q.M.
- Applied Physics Letters, 2005, 87(11): 111105.
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Room temperature continuous wave operation of 1.33-μm InAs/GaAs quantum dot laser with high output power
- Han, Qin*; Niu, Zhichuan; Ni, Haiqiao; Zhang, Shiyong; Yang, Xiaohong; Du, Yun; Tong, Cunzhu; Zhao, Huan; Xu, Yingqiang; Peng, Hongling; Wu, Ronghan
- Chinese Optics Letters, 2006, 4(7): 413-415.
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Room-temperature continuous-wave operation of the In(Ga)As/GaAs quantum-dot VCSELs for the 1.3 mu m optical-fibre communication
- Xu, Dawei; Tong, Cunzhu; Yoon, Soon Fatt; Fan, Weijun; Zhang, Dao Hua; Wasiak, Michal; Piskorski, Lukasz; Gutowski, Krzysztof; Sarzala, Robert P.; Nakwaski, Wlodzimierz*
- Semiconductor Science and Technology, 2009, 24(5): 55003.
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