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Ionic doping effect in ZrO2 resistive switching memory

Zhang, Haowei; Gao, Bin; Sun, Bing; Chen, Guopeng; Zeng, Lang; Liu, Lifeng; Liu, Xiaoyan; Lu, Jing; Han, Ruqi; Kang, Jinfeng^*; Yu, Bin

Applied Physics Letters, 2010, 96(12): 123502.

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Improved uniformity of resistive switching behaviors in Hf O2 thin films with embedded Al layers

Yu, Shimeng; Gao, Bin; Dai, Haibo; Sun, Bing; Liu, Lifeng; Liu, Xiaoyan; Han, Ruqi; Kang, Jinfeng^*; Yu, Bin

Electrochemical and Solid-State Letters, 2010, 13(2).

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O-3-sourced atomic layer deposition of high quality Al2O3 gate dielectric for normally-off GaN metal-insulator-semiconductor high-electron-mobility transistors

Huang, Sen; Liu, Xinyu^*; Wei, Ke; Liu, Guoguo; Wang, Xinhua; Sun, Bing; Yang, Xuelin; Shen, Bo; Liu, Cheng; Liu, Shenghou; Hua, Mengyuan; Yang, Shu; Chen, Kevin J.

Applied Physics Letters, 2015, 106(3): 033507.

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Al2O3/GeOx gate stack on germanium substrate fabricated by in situ cycling ozone oxidation method

Yang, Xu; Wang, Sheng-Kai^*; Zhang, Xiong^*; Sun, Bing; Zhao, Wei; Chang, Hu-Dong; Zeng, Zhen-Hua; Liu, Honggang^*

Applied Physics Letters, 2014, 105(9).

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Effect of the Si-doped In0.49Ga0.51P barrier layer on the device performance of In0.4Ga0.6As MOSFETs grown on semi-insulating GaAs substrates

Chang Hu-Dong; Sun Bing; Xue Bai-Qing; Liu Gui-Ming; Zhao Wei; Wang Sheng-Kai; Liu Hong-Gang^*

CHINESE PHYSICS B, 2013, 22(7): 077306.

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A High Performance In0.7Ga0.3As MOSFET with an InP Barrier Layer for Radio-Frequency Application

Chang Hu-Dong; Liu Gui-Ming; Sun Bing; Zhao Wei; Wang Wen-Xin; Liu Hong-Gang^*

CHINESE PHYSICS LETTERS, 2013, 30(3): 037303.

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Extrinsic Base Surface Passivation in Terahertz GaAsSb/InP DHBTs Using InGaAsP Ledge Structures

Liu, H. G.^*; Chang, H. D.; Sun, B.

IEEE Transactions on Electron Devices, 2011, 58(2): 576-578.

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The Impact of HCl Precleaning and Sulfur Passivation on the Al2O3/Ge Interface in Ge Metal-Oxide-Semiconductor Capacitors

Xue Bai-Qing; Chang Hu-Dong; Sun Bing; Wang Sheng-Kai; Liu Hong-Gang^*

Chinese Physics Letters, 2012, 29(4): 046801.

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High-Performance GaN-Based Light-Emitting Diodes on Patterned Sapphire Substrate with a Novel Patterned SiO2/Al2O3 Passivation Layer

Guo, Hao; Zhang, Xiong; Chen, Hongjun; Liu, Honggang^*; Zhang, Peiyuan; Liao, Qinghua; Hu, Shujuan; Chang, Hudong; Sun, Bing; Wang, Shengkai; Cui, Yiping

APPLIED PHYSICS EXPRESS, 2013, 6(7): 072103.

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