林信南科研背景简介<br>1997年北京大学计算机系微电子专业本科毕业留校于北京大学微电子学研究所任职, 2007年11月获得香港科技大学博士学位后返回北大深圳研究生院任教。主要研究于电子器件工艺与模型方向，在国际期刊和会议上发表Sci/EI收录论文80余篇。作为第一负责人主持了国家973 A类课题,国家自然基金面上,青年基金,深圳市基础研究杰出青年基金等多项项目,2010年获得2009年度深圳市创新奖高等院校类第一名，个人排名第二；2011-12年度北京大学深圳研究生院优秀教师;2012年度获广东省"金博"奖创新突出贡献奖.<br>担任中国电工技术学会电气节能专委会副秘书长，电力电子学会理事，IEEE EDSSC会议技术委员会成员,Martials today, IEEE Transactions on Device and Materials Reliability, IEEE Transactions on Electronic Device, Microelectronics Journal,电子学报,半导体学报等多个中外期刊审稿人.<br>最近两年内(2012.2—2014.2)代表性学术专著及期刊论文5篇:<br>专著章节:<br>1. “Modeling FinFETs for CMOS Applications”, Lining Zhang, Chenyue Ma, Xinnan Lin, J. H, M.Chan, Chapter11 of “Toward Quantum FinFET”, Springer ISSN 2195-2159,2014<br>学术论文:<br>1. “Suppression of tunneling leakage current in junctionless nanowire transistors”, Haijun Lou, Dan Li, Yan Dong, Xinnan Lin, Jin He, Shengqi Yang and Mansun Chan, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2013/Vol.28/12<br>2. “Effects of Fin Sidewall Angle on Subthreshold Characteristics of Junctionless Multigate Transistors”, Haijun Lou, Dan Li, Yan Dong, Xinnan Lin, Shengqi Yang, Jin He, and Mansun Chan, Japanese Journal of Applied Physics, 2013/Vol.52/9<br>3. “An Analytical Charge Model for Double-Gate Tunnel FETs”, Lining Zhang, Xinnan Lin, Jin He, and Mansun Chan, IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 59, NO. 12, DECEMBER 2012.<br>4. “A Junctionless Nanowire Transistor With Dual-Material-Gate”, Haijun Lou, Lining Zhang, Yunxi Zhu, Xinnan Lin, Shengqi Yang, Jin He and Mansun Chan, IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 59, NO. 7, JULY 2012<br>5. “Phase-Change Memory with Multi-Fin Thin-Film-Transistor Driver Technology”, Lin Li, Lining Zhang, Xinnan Lin, Jin He, Chi On Chui and Mansun Chan, IEEE Electron Device Letters, VOL. 33, NO. 3, MARCH 2012