科研之友
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摘要
The application of transparent conducting indium-tin-oxide(ITO) film as full front electrode replacing the conventional bus-bar metal electrode in Ⅲ–Ⅴ compound GaInP solar cell was proposed. A high-quality, non-rectifying contact between ITO and 10 nm N+-GaAs contact layer was formed, which is benefiting from a high carrier concentration of the terrilium-doped N+-GaAs layer, up to 2×1019cm-3. A good device performance of the GaInP solar cell with the ITO electrode was observed. This result indicates a great potential of transparent conducting films in the future fabrication of larger area flexible Ⅲ–Ⅴ solar cell.
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单位中国科学院
