GAN-BASED RADIO FREQUENCY DEVICE HAVING П-SHAPED GATE AND MANUFACTURING METHOD THEREFOR

作者：WANG, Hong; LIU, Xiaoyi; ZHOU, Quanbin

来源：2019-12-31, OTHER, CN2019130988.

A GaN-based radio frequency device having a П-shaped gate and a manufacturing method therefor. The device comprises an AlGaN/GaN heterojunction epitaxial layer (1); the AlGaN/GaN heterojunction epitaxial layer (1) is of a boss structure; the upper portion of the boss is an active region (2); two ends of the upper surface of the active region (2) are respectively connected to a source electrode (3) and a drain electrode (4); a gate dielectric layer (5) is provided in a region, etc., other than a region connected to the active region (2), of the upper surface of the AlGaN/GaN heterojunction epitaxial layer (1); the upper surface of the gate dielectric layer (5) is connected to a П-shaped gate electrode; and the П-shaped gate electrode is positioned between the source electrode (3) and the drain electrode (4). By means of two gate pins (9), having a certain interval and being in direct contact with the AlGaN/GaN heterojunction epitaxial layer (1), of the П-shaped gate, the length of the gate electrode is effectively reduced under the condition of ensuring that the gate resistance is nearly unchanged, and the cut-off frequency is improved.

• 单位
  华南理工大学