科研之友
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摘要
An investigation was made into the effect of doping with the elemental crystal Ge or/and Ge O2 on the Ti O2–V2O5–Y2O3 varistor ceramics. The result shows that as the doping contents of V2O5 and Y2O3 are 0.5 mol%,respectively, co-doping with 0.3 mol% Ge and 0.9 mol% Ge O2 makes the highest α value(α=D12.8), the lowest breakdown voltage V1 m A(V1m A D15.8 V/mm) and the highest grain boundary barrier φB(φB D1.48 e V), which is remarkably superior to the Ti O2–V2O5–Y2O3 varistor ceramics undoped with Ge and Ge O2 and mono-doped with Ge or Ge O2. The Ti O2–V2O5–Y2O3–Ge–Ge O2 ceramic has the prospect of becoming a novel varistor ceramic with excellent electrical properties.
