科研之友
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摘要
Silicon-based photonic integration has attracted the interest of semiconductor scientists because it has high luminous efficiency and electron mobility. Breakthroughs have been made in silicon-based integrated lasers over the past few decades. Here we review three main methods of integration of Ⅲ–Ⅴ materials on Si, namely direct growth, bonding, and selectivearea hetero-epitaxy. The Ⅲ–Ⅴ materials we introduced mainly include materials such as GaAs and InP. The lasers are mainly lasers of related communication bands. We also introduced the advantages and challenges of the three methods.
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