PdSe2纳米线薄膜/Si异质结近红外集成光电探测器

作者：Lin Yanan; Wu Yadong; Cheng Haiyang; Lu Yang^*; Xie Chao^*; Luo Linbao^*

来源：Acta Optica Sinica, 2021, 41(21): 2125001.

DOI：10.3788/AOS202141.2125001

• Image sensing
• Integrated device
• Near-infrared light
• Optoelectronics
• PdSe2 nanowire film
• Photodetector

In this study, a PdSe2 nanowires (NWs) film/Si heterojunction-based near-infrared (NIR) integrated photodetector is presented. The large-area PdSe2 NWs are synthesized via thermal-assisted selenization of pregrown Pd NWs, and the integrated photodetector with 8×8 device units is obtained by assembly and transfer of the NWs. According to optoelectrical characterization, the as-fabricated device shows visible photoresponse over a broad wavelength range of 2001300 nm with a peak response at approximately 810 nm. The device exhibits a responsivity (R) of 166 mA?W-1 under 810-nm light irradiation at zero bias, which increases to 3.24 A?W-1 when applying a -2 V bias voltage. Furthermore, the integrated device exhibits excellent uniformity, and all 64 devices have a current On/Off ratio of approximately 60. Because of its high-performance uniformity, the integrated photodetector can be used as an optical image sensor to accurately record a LASDOP pattern projected by NIR light, indicating a promising future use. ? 2021, Chinese Lasers Press. All right reserved.

• 单位
  安徽大学; 合肥工业大学