摘要

The active microwave cold noise source technology is introduced. The working principle and key technology of active microwave cold noise source are explained. A design method of active microwave cold noise source is proposed, and the influence of the key steps in the design process on the performance of the noise source is analyzed. Based on these theories, the C band active microwave cold noise source device was developed by the pHEMT type field effect transistor. In the end, the performance of the device is tested and analyzed.

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