Study on Deep Ultraviolet Computational Lithography Techniques [深紫外计算光刻技术研究]

作者：Guodong C.; Zinan Z.; Sikun L.; Xiangzhao W.^*

来源：LASER & OPTOELECTRONICS PROGRESS, 2022, 59(9): 0922007.

DOI：10.3788/LOP202259.0922007

• computational lithography
• deep ultraviolet lithography
• inverse lithography technology
• optical proximity effect correction
• source mask optimization

Lithography tool is the core equipment for the ultra-large-scale integrated circuit (ULSI) manufacturing. Deep ultraviolet (DUV) lithography tool is the mainstream lithographic equipment in the advanced technology node of chip manufacturing. The imaging quality of lithography tool, which has a direct impact on the performance metrics, is the premise that the lithography tool can work properly. Computational lithography technique is a vital way to improve the lithographic imaging quality when the software and hardware of lithography tool remain unchanged. It optimizes the illumination source, the mask pattern, and the process parameters using mathematical models and algorithms. With the help of computational lithography, the target pattern can be transferred onto the wafer with high imaging fidelity. Lithographic imaging model is the basis of computational lithography technique. The continuous increase of imaging model's simulation accuracy and speed supports the development of computational lithography technique. Combining the research work of our group, the development of lithographic imaging model is reviewed. Then the research progresses of three main computational lithography techniques, including optical proximity effect correction (OPC), source mask optimization (SMO), and inverse lithography technology (ILT), are summarized in this paper.

• 单位
  中国科学院大学