Ultra-power-efficient heterogeneous Ⅲ–Ⅴ/Si MOSCAP(de-)interleavers for DWDM optical links

作者：STANLEY CHEUNG^*; GEZA KURCZVEIL; YINGTAO HU; MINGYE FU; YUAN YUAN; DI LIANG; RAYMOND G.BEAUSOLEIL

来源：Photonics Research, 2022, 10(02): 22-34.

We discuss the design and demonstration of various Ⅲ–Ⅴ/Si asymmetric Mach–Zehnder interferometer(AMZI)and ring-assisted AMZI(de-)interleavers operating at O-band wavelengths with 65 GHz channel spacing. The wafer-bonded Ⅲ–Ⅴ/Si metal-oxide-semiconductor capacitor(MOSCAP) structure facilitates ultra-low-power phase tuning on a heterogeneous platform that allows for complete monolithic transceiver photonic integration.The second-and third-order MOSCAP AMZI(de-)interleavers exhibit cross-talk(XT) levels down to-22 dB and-32 dB with tuning powers of 83.0 nW and 53.0 nW, respectively. The one-, two-, and three-ring-assisted MOSCAP AMZI(de-)interleavers have XT levels down to-27 dB,-22 dB, and-20 dB for tuning powers of 10.0 nW, 7220.0 nW, and 33.6 nW, respectively. The leakage current density is measured to be in the range of1.6–27 μA∕cm2. To the best of our knowledge, we have demonstrated for the first time, athermal Ⅲ–Ⅴ/Si MOSCAP(de-)interleavers with the lowest XT and reconfiguration power consumption on a silicon platform.