Recent progress in epitaxial growth of Ⅲ–Ⅴ quantum-dot lasers on silicon substrate

作者：Shujie Pan; Victoria Cao; Mengya Liao; Ying Lu; Zizhuo Liu; Mingchu Tang; Siming Chen^*; Alwyn Seeds; Huiyun Liu

来源：Chinese Journal of Semiconductors, 2019, 40(10): 43-51.

In the past few decades, numerous high-performance silicon(Si) photonic devices have been demonstrated. Si, as a photonic platform, has received renewed interest in recent years. Efficient Si-based Ⅲ–Ⅴ quantum-dot(QDs) lasers have long been a goal for semiconductor scientists because of the incomparable optical properties of Ⅲ–Ⅴ compounds. Although the material dissimilarity between Ⅲ–Ⅴ material and Si hindered the development of monolithic integrations for over 30 years, considerable breakthroughs happened in the 2000 s. In this paper, we review recent progress in the epitaxial growth of various Ⅲ–Ⅴ QD lasers on both offcut Si substrate and on-axis Si(001) substrate. In addition, the fundamental challenges in monolithic growth will be explained together with the superior characteristics of QDs.