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摘要
Rapid developmenl of flexible electronics requires thin film transistor (TFT) to have features of low power consumption, good bending resistance and ability to be fabricated at low tempera- ture. Gate insulator is one of the key materials in TFT device. Organic gate insulator prepared by solu- tion method has the advantages of low cost, strong flexibility and is suitable for large area processing. In this paper, polyvinylpyrrolidone (PVP) dielectric film was achieved by inkjet printing process. The composition difference of printed PVP films with different annealing temperature was analyzed by XPS, and leakage current, capacitance and transfer characteristic of PVP devices were obtained by semiconductor analyzer. TFT device with PVP film annealed at 200 °C showed leakage current density ≤10-4A/cm2(5 V) and relative dielectric constant about 3.8. Saturation mobility of device based on glass substrate is 4.6 cm2/(V.s) and the Ion/Ioff ratio is ≥105 while that for device based on PI sub- strate with bending radius of 20 mm is 2.8 cm2/(V.s) and 6×104, respectively. This result demon- strates that PVP dielectric is promising in flexible electronics. ? 2021, Science Press.
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