摘要
This paper describes a wideband class-D RF power amplifier (PA) featuring switched-capacitor (SC) modulation, a high-order LC-matching network (MN) and a reliability-aware supply-voltage boosting technique. Simulated in 65-nm CMOS at an elevated 3.2-V supply, the rms voltage stressed on each device is managed to be well within the reliability limits. The broadband coverage is from 2.5 to 6 GHz with peak power-added efficiency (PAE) of 40% at 26.4 dBm output power. After digital predistortion, the EVM is controlled <6.8% under the 16-QAM modulated test signals.
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单位澳门大学