Large-area epitaxial growth of 2D ZrS2(1?x)Se2x semiconductor alloys with fully tunable compositions and bandgaps for optoelectronics [全组分/带隙可调的二维ZrS2(1?x)Se2x半导体合金的外延生长及其光电应用]

作者：Huang J.; Tian Y.; Cheng Y.; Li X.; Zhang S.; Jiang J.; Chen J.; Wang G.; Li J.; Yin Z.; Zhang X.

来源：Science China-Materials, 2023.

DOI：10.1007/s40843-022-2297-1

• alloying
• chemical vapor deposition
• epitaxial growth
• photodetectors
• transition metal dichalcogenides

Bandgap engineering of transition metal dichalcogenides (TMDs) is significant for broadening their applications in electronics and optoelectronics devices. Herein, we report the new epitaxial growth of large-area uniform ZrS2(1?x)Se2x alloy films with fully tunable composition on sapphire substrates via a facile single-step chemical vapor deposition method. The ZrS2(1?x)Se2x alloys exhibit good single crystallinity and epitaxial quality, as well as uniform elemental distribution, and the epitaxial relationship with the substrate is determined to be ZrS2(1?x)Se2x (0001)[10-10]∥sapphire (0001)[11-20]. The bandgap of ZrS2(1?x)Se2x alloy exhibits a pronounced bowing behavior with continuously tunable bandgaps from 1.86 to 1.15 eV, depending on the Se composition. The ZrS2(1?x)Se2x-based photodetectors demonstrate a sensitive photoresponse to visible light with a fast response time of ～100 μs, and their performances are significantly improved as the Se composition decreases. This work provides an efficient way to synthesize ZrS2(1?x)Se2x alloys with fully tunable bandgaps, providing great flexibility in designing TMD-based optoelectronic devices. [Figure not available: see fulltext.]

• 单位
  中国科学院大学