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摘要
The optical properties of the type-Ⅱ lineup InxAl1-xN–Al0.59Ga0.41N/Al0.74Ga0.26N quantum well(QW) structures with different In contents are investigated by using the six-by-six K–P method.The type-Ⅱ lineup structures exhibit the larger product of Fermi–Dirac distribution functions of electron fcn and hole(1-fvUm) and the approximately equal transverse electric(TE) polarization optical matrix elements(|Mx|2) for the c1–v1 transition.As a result, the peak intensity in the TE polarization spontaneous emission spectrum is improved by 47.45%–53.84% as compared to that of the conventional AlGaN QW structure.In addition, the type-Ⅱ QW structure with x～0.17 has the largest TE mode peak intensity in the investigated In-content range of 0.13–0.23.It can be attributed to the combined effect of |Mx|2 and fcn(1-fv Um) for the c1–v1, c1–v2, and c1–v3 transitions.
