Temperature Dependence and Evolution Mechanism of Aluminum Nitride Morphologies [温度对氮化铝表面形貌的调控及演化机理]

作者：Niu H.-D.; Kong S.-S.; Yang S.-Y.; Liu X.-L.; Wei H.-Y.; Yao W.-Z.; Li H.-J.; Chen Q.-Q.; Wang L.-S.; Wang Z.-G.

来源：Chinese Journal of Luminescence, 2021, 42(11): 1739-1747.

DOI：10.37188/CJL.20210287

• Aluminum nitride
• Growth temperature
• Hydride vapor phase epitaxy
• Surface morphology
• Ultra-wide bandgap semiconductor

Aluminum nitride(AlN) is a significant ultra-wide bandgap semiconductor material. This paper studies the surface morphology evolution and growth mechanism of AlN grown on sapphire substrates by hydride vapor phase epitaxy(HVPE). The morphologies of AlN are controlled by the nitridation pre-treatment and the growth temperature from 750℃ to 1 100℃. The results show that growth temperature played a critical role in the AlN growth of morphology and growth mode. The difference in nanoscale or microscale morphologies of AlN is attributed to the surface migration of Al adatoms dominated by the growth temperature and the evolution of the dislocation. Moreover, the surface morphology evolution leads to an inverted pyramid morphology or large V-shaped pits at the growth temperature of 900℃. The grown V-shaped pits have {10-11} semi-polar facets and follow the three-dimensional(3D) growth mode. The semi-polar facets AlN structure could be used for realizing facet-controlled epitaxial of semi-polar UV-LED or other Ⅲ-nitride growth, which has prospects in optoelectronic and electronic devices.

• 单位
  中国科学院大学