摘要
The Tb doped CaMnO 3 oxide thermoelectric materials are fabricated by the sol-gel and the ceramic sintering method. The phase composition, microstructure as well as the electrical properties are studied. The results show that the as prepared Tb doped samples are single phase crystalline materials. The grain size is decreased by increasing the Tb doping content. The grains inter-connected and the bulk materials are consolidated. The resistivity for all Tb doped samples is decreased by increasing temperature with semiconductor transport. The sample with Tb doping content of 0.14 show lowest resistivity. The absolute value of Seebeck coefficient is decreased by increasing the Tb doping content, this is caused by the induced electron carriers by Tb. The power factors for all samples are increased by increasing temperture, and the doped samples show enhanced power factor comparing with that of the un-doped counterpart. The sample with Tb doping content of 0.08 shows highest power factor of 2.0×10 -4 W?m -1 ?K -2 at 973 K, which is very much higher than that of the un-doped one. The electrical property of the titled oxide material can be optimized by rare earth Tb doping.
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