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摘要
Terahertz detection and imaging technology are the foundation and key to promote terahertz technology development. In order to realize high sensitivity terahertz detection and imaging, a mesa-type silicon-based blocked-impurity-band (BIB) terahertz detector is designed. The structure and detection mechanism of the detector are introduced in detail. The preparation processes are presented briefly. A series of its photoelectric performances are investigated. A blackbody responsivity test system is built. The results show that at 4.2K temperature and 3.8V bias, its peak responsivity reaches 55A/W, and the response spectrum covers the frequency range from 6.7~60THz. In addition, a scan imaging system is set, and the high-resolution passive imaging is achieved. The imaging result shows that the spatial resolution and the temperature resolution of the imaging system can reach about 400μm and 7.5mK, respectively.
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