Impact of H‐Doping on n‐Type TMD Channels for Low‐Temperature Band‐Like Transport

作者：Han Sol Lee; Sam Park; June Yeong Lim; Sanghyuck Yu; Jongtae Ahn; Do Kyung Hwang; Yumin Sim; Je‐Ho Lee; Maeng‐Je Seong; Sehoon Oh; Hyoung Joon Choi; Seongil Im

来源：Small, 2019, 15(38): 1901793.

DOI：10.1002/smll.201901793

• Band‐like transport
• H‐doping
• N‐type
• Transition metal dichalcogenides
• Variable range hopping (VRH) transport

Abstract(#br)Band‐like transport behavior of H‐doped transition metal dichalcogenide (TMD) channels in field effect transistors (FET) is studied by conducting low‐temperature electrical measurements, where MoTe2, WSe2, and MoS2 are chosen for channels. Doped with H a...