980 nm high-power tapered semiconductor laser with high order gratings [980 nm大功率高阶光栅锥形半导体激光器]

作者：Lang X.-K.; Jia P.; Qin L.; Chen Y.-Y.; Liang L.; Lei Y.-X.; Song Y.; Qiu C.; Wang Y.-B.; Ning Y.-Q.; Wang L.-J.

来源：Journal of Infrared and Millimeter Waves, 2021, 40(6): 721-724.

DOI：10.11972/j.issn.1001-9014.2021.06.003

• High order Bragg gratings
• High power
• Narrow line-width
• Semiconductor laser diode

In order to obtain high power, narrow line width and near diffraction limit output semiconductor laser diodes, the high order Bragg gratings (HOBGs) and master oscillator power-amplifier (MOPA) have been fabricated in the waveguide of HOBGs-MOPA laser diodes with an emission wavelength of 980 nm. The longitudinal mode of HOBGs-MOPA was selected by the HOBGs with a period of 11.37 μm. The single-mode optical power is amplified by a tapered waveguide with an angle of 6°. In this paper, we present a single mode laser diode with continuous wave power 2.8 W at a 3 dB line-width of 31 pm. The laser diode operates in a close to diffraction-limited optical mode (M2=2.51, laterally).

• 单位
  中国科学院大学