Brief Review of Research Progress on the Deformation, Damage and Failure of Silicon Carbide under Extreme Conditions [极端条件下碳化硅的变形、损伤与破坏研究进展]

作者：Li W.; Feng L.; Zhang X.; Yao X.^*

来源：Chinese Journal of High Pressure Physics, 2021, 35(4): 040103.

DOI：10.11858/gywlxb.20210783

• Dynamic behavior
• Dynamic loading
• Multiscale
• Silicon carbide

As an important ceramic and semiconductor material, silicon carbide has important engineering and scientific value in application fields such as national defense, military, aerospace, and high-pressure material science. This paper summarized the physical and mechanical behaviors, and characteristics of silicon carbide under dynamic loading, such as deformation, damage and failure, providing a research progress in the deformation and failure of silicon carbide under different loading conditions and microstructures from both the experimental studies and computational simulations. Then the paper summarized some existing problems related to the dynamic response of silicon carbide materials, and proposed several important development directions in this field, in order to provide a useful reference for the research of related research groups.

• 单位
  华南理工大学