Theoretical study of a group Ⅳ p–i–n photodetector with a flat and broad response for visible and infrared detection

作者：Jinyong Wu; Donglin Huang; Yujie Ye; Jianyuan Wang; Wei Huang; Cheng Li; Songyan Chen^*; Shaoying Ke^*

来源：Chinese Journal of Semiconductors, 2020, 41(12): 54-60.

We report a theoretical study of a broadband Si/graded-SiGe/Ge/Ge0.9Sn0.1 p–i–n photodetector with a flat response based on modulating thickness of the layers in the active region. The responsivity of the photodetector is about 0.57 A/W in the range of 700 to 1800 nm. This structure is suitable for silicon-based epitaxial growth. Annealing is technically applied to form the graded-SiGe. The photodetector reaches a cut-off wavelength at ～2300 nm and a low dark-current density under 3 V reverse bias about 0.17 mA/cm2 is achieved theoretical at room temperature. This work is of great significance for silicon-based detection and communication, from visible to infrared.

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  厦门大学