科研之友
微信
新浪微博
Facebook
分享链接
摘要
Abstract(#br)Electrostatic potential barriers at doped ZnO‐ZnO interfaces can be modified by stress‐induced polarization charges. This concept was enhanced by preparing ZnO‐based single crystal‐polycrystal‐single crystal structures by diffusion bonding. Increasing time for epitaxial solid‐state tran...
