摘要

The bulk Bi1-2xBaxPbxCuSeO (x=0, 0.06) oxide semiconductor ceramics doping Ba/Pb in BiCuSeO were prepared by mechanical alloying (MA) and spark plasma sintering (SPS). The effects of Ba/Pb doping and ball milling (BM) time on the microstructure, thermoelectric properties, and hardness were investigated systematically. The results show that partial substitution of Bi in BiCuSeO with a small amount of Ba/Pb can significantly improve the conductivity and power factor of the material, while ball milling can reduce the grain size of the material to about 350 mm, thus reducing the thermal conductivity of the material and improving its electrical conductivity. The maximum power factor of Bi0.88Ba0.06Pb0.06CuSeO ceramics prepared by ball milling for 16 h is 0.76 mW/(m?K2) at 873 K, and the maximum ZT value is 1.18, which is 2.71 times and 2.19 times higher than that of undoped BiCuSeO ceramics, respectively. ? 2019, Editorial Office of Materials Science and Engineering of Powder Metallurgy. All right reserved.