摘要

In this study, metal-assisted chemical etching (MACE) method is used to fabricate silicon nanowires in the pyramid surface etched by the conventional alkaline solution. The reaction process and reaction mechanism of Ag assisted etching are described in detail. Experiments and software simulations prove that the pyramid-nanowire structure has better performance in reducing reflectivity than the pyramid structure in wide spectral range and broad-angle-incident. At the same time, the etching rate and tilt angle of nanowires are also studied.

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