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摘要
AlGaN based materials are promising to fabricate UV photoelectric devices due to the direct, wide and adjustable bandgap. With decades of research efforts, great progress has been made in improving the quality of AlGaN based materials on heterogeneous substrates, and the doping efficiency has been greatly improved. As a result, great progress has been made on the fabrication of UV photoelectric devices. In this review, the growth methods to obtain high quality AlGaN based materials by metal-organic chemical vapor deposition(MOCVD) and the methods to achieve high doping efficiency are summarized. Moreover, the recent progress of UV LED and UV photodetectors are also introduced.
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