Progress of single event effects and hardening technology of CMOS image sensors [CMOS图像传感器单粒子效应及加固技术研究进展]

作者：Cai Y.; Li Y.; Wen L.; Guo Q.^*

来源：Nuclear Techniques, 2020, 43(1): 010502.

DOI：10.11889/j.0253-3219.2020.hjs.43.010502

• CMOS image sensor
• Radiation hardening technology
• Single event effects
• Space radiation

[Background]: CMOS imager sensors (CISs) used in the space radiation environments are susceptible to single event effects (SEEs), which can cause images corruption and even CIS function failure. [Purpose]: This study aims to evaluate the progress of SEEs and hardening technology of CIS. [Methods]: In this paper, the SEEs on the CIS are reviewed by summarizing the investigation from different particles such as heavy ions, protons, electrons and neutrons, and from different types of SEEs: including single event transient (SET), single event upset (SEU), single event functional interrupt (SEFI) and single event latch-up (SEL). Progresses of SEEs hardening technology on CIS are briefly investigated. [Results & Conclusions]: This paper analyzes the SEEs and problems to be solved urgently on hardening technology on the CIS technology, which provides theoretical reference for further researches in the future.

• 单位
  中国科学院大学