科研之友
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摘要
High Current Spike (HCS) of nonvolatile Flash chip has been tested by pico-second pulsed laser single event effect experimental facility. Accurate positioning of pulsed laser confirmed that sensitive area triggering HCS was charge pump of the chip. Different laser energies and specific locations in charge pump can trigger the same amplitude current spikes with different time cycle, although HCS has the same phenomenon with single event latch-up, and completely different mechanisms. When laser energy was high enough to be equivalent to heavy ion's LET value of 99.8 MeV?cm2/mg, continuous irradiation on the same sensitive area of charge pump can trigger the high current spike of the chip, which will cause catastrophic failure to the chip due to multiple charging and discharging.
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