The effect of In content on high-density InxGa1−xAs quantum dots

作者：L.K Yu; B. Xu; Z.G. Wang; P. Jin; C. Zhao; W. Lei; J. Sun; K. Li; L.J. Hu; L.Y. Liang

来源：Journal of Crystal Growth, 2005, 282(1–2): 173-178.

• A1. High density
• A1. Photoluminescence
• A1. Uniformity
• A3. Molecular beam epitaxy
• A3. Quantum dots
• B1. In component

We have successfully grown self-assembled InxGa1−xAs (x=0.44, 0.47, 0.50) quantum dots (QDs) with high density (>1011/cm2) by MBE. The effect of In content on the high-density QD is investigated by atomic force microscopy (AFM) and photoluminescence (PL) spectra. It is found that sample with In-mole-fraction of 0.5 shows small size fluctuation and high PL intensity. The influence of growth temperature on high-density QD is also investigated in our experiment.