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摘要
The waveguide thickness of 808 nm InAlGaAs/AlGaAs laser diode chip was optimized in this paper. The study found that when the thickness ratio of the N-waveguide to the P-waveguide was 1.8, the chip had the highest power conversion efficiency. Chip-on-submount(COS) packaged single emitters and fiber-coupled modules@core diameter 62.5 μm, numerical aperture(NA) 0.22 were presented based on this conclusion, and the efficiency characteristic of the devices in the range of -10-90℃ was analyzed. The results showed that when the temperature increased from -10 to 90℃, the carrier leakage ratio of COS single emitter increased from 1.18% to 16.67%, and the carrier leakage ratio of fiber-coupled module increased from 1.99% to 17.73%, indicating that the increase of carrier leakage caused by temperature rise was the main factor leading to the decrease of power conversion efficiency. Moreover, the effects of high-temperature aging, thermal vacuum conditions and space radiation on the power conversion efficiency of fiber-coupled module were studied and the internal factors that lead to the reduction of the device's power conversion efficiency were revealed.
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单位中国科学院大学; 瞬态光学与光子技术国家重点实验室
