摘要

In this paper, a multi-channel low noise preamplifier with 0.18 μm CMOS technology is developed for silicon micro-strip detector. The charge sensitive preamplifier and pole-zero cancellation circuit are designed. And the design parameters such as integral nonlinearity, noise slope and reliability are analyzed. The equivalent input noise is 685.73+32.37 e-rms/pF, when input energy dynamic range of the charge is 20~830 fC.