摘要
Element doping is a common and efficient method that can be used to substantially enhance dielectric energy storage performance. Despite continued efforts and progress in this field, investigations of the different effects of single- and multi-element doping on energy storage properties are lacking. In this work, we study the dependence of microstructures and energy storage properties on element doping using a BaBi4Ti4O15 material system. Our results reveal that an amorphous phase appears and the grain size decreases with an increasing number of doping elements. Such a scenario is conducive to improving the breakdown field strength and suppressing polarization-switching hysteresis. Therefore, we achieve an ultrahigh energy storage density of 76 J/cm(3) and an efficiency of 82.5% using the multi-element-doped composition. This work provides guidance for preparing high-energy-storage films.
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