Design of VCSEL Driver Based on 0.13 μm SOI COMS Process [基于0.13 μm SOI COMS 工艺的VCSEL驱动器设计]

作者：Pan Y.; Sun X.; Huang G.; Ye J.; Gong D.; Dong Y.; Yang W.; Yang P.

来源：Piezoelectrics & Acoustooptics, 2017, 39(6): 920-923.

• High speed
• Laser driver
• Low power
• Shunt peaking
• Silicon-on-insulator(SOI)

The design of low power high speed Vertical-Cavity Surface-Emitting Laser (VCSEL) driver is introduced in this paper. The chip is designed based on the domestic 0.13 μm SOI COMS process which can provide 6~8 mA adjustable modulation current and 4~7 mA adjustable bias current. The multi-stage amplifier combined with passive shunt peaking inductor is used to expand the bandwidth of the driver. The test results show that the maximum operating rate of the driver is 5 Gbit/s and the total consumption is only 48 mW under the single power supply voltage of 1.2 V.

• 单位
  华中师范大学