Research Progress on the Imaging of Three-Dimensional Mask for Extreme Ultraviolet Lithography [EUV 光刻三维掩模成像研究进展]

作者：Zinan Z.; Sikun L.; Xiangzhao W.^*

来源：LASER & OPTOELECTRONICS PROGRESS, 2022, 59(9): 0922021.

DOI：10.3788/LOP202259.0922021

• diffraction
• extreme ultraviolet lithography
• imaging quality
• lithography
• three-dimensional mask model

Extreme ultraviolet (EUV) lithography is the most advanced lithography technology, and guarantees the development of the chip to higher integration degree. High imaging quality is the premise to ensure the performance of the EUV lithography system, while the reflective three-dimensional (3D) mask and the special imaging optics bring more challenges in improving the imaging quality of EUV lithography. The research of the imaging of 3D mask is the basis to improve the imaging quality, and the 3D mask imaging model is an important research tool. In this paper, combined with the research work of our group, the principle of the imaging of 3D mask for EUV lithography is briefly introduced and the typical 3D mask models are reviewed. Then the researches on the imaging quality of 3D mask for EUV lithography are introduced. Finally, the research tendency of this field is prospected.

• 单位
  中国科学院大学