Fault Model Analysis of SRAM Single Event Upset Induced by Pulsed Laser [脉冲激光诱发 SRAM 单粒子翻转的故障模型分析]

作者：Li Y.^*; Zhu X.; Jiang H.-L.; Han J.-W.

来源：密码学报（中英文）, 2021, 8(6): 1074-1081.

DOI：10.13868/j.cnki.jcr.000497

• fault model
• laser fault injection
• multiple-bit upset (MBU)
• single-bit upset (SBU)
• SRAM

The key to fault attack against cryptographic chips lies in the accurate injection of storage resource fault models. Using a high-precision pulsed laser single event effect scanning and mapping facility, a single event upset fault model test was carried out on two SRAM devices with different process sizes, and the laser energy and stored data type were used to investigate the fault trigger probability and fault model distribution probability of SRAM devices. The test results show that, based on the threshold of 3 times the laser energy, a high fault trigger probability of nearly 90% can be achieved, and the fault type is mainly multiple-bit upset; under the laser energy threshold, a low fault trigger probability of nearly 10% to 30% can be achieved, the fault type includes 1-bit and 2-bit upset, and the proportion of 1-bit upset fault is as high as 80%; in the local area covering multiple memory cells, the type of stored data has little effect on the fault model distribution probability of the SRAM device.

• 单位
  中国科学院大学