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摘要
Herein, a Schottky junction UV photodetector based on multilayer PtSe2/TiO2 nanorod (NR) arrays is proposed. The multilayer PtSe2 film and TiO2 NRs are synthesized using chemical vapor deposition and hydrothermal methods, respectively. The wet transfer method is used to fabricate the multilayer PtSe2/TiO2 NRs Schottky junction device with upper and lower structures. Photoelectric measurement results show that the designed device exhibits a high sensitivity to 365-nm UV light. The switch ratio of the device can reach as high as 5.5×104, the responsivity and specific detectivity are 57 mA/W and 8.36×1011 Jones, respectively. Moreover, the device shows a good stability and the photocurrent remains nearly unchanged after storage in air for 5 weeks. Finally, the image sensing characteristics of a single device are investigated, which confirm that the PtSe2/TiO2 photodetector can be used as an image sensor to achieve simple UV pattern imaging. ? 2020, Chinese Lasers Press. All right reserved.
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