Comparison of Radiation Damage between Threshold Voltage and Switching Response of SiC Power MOSFET [碳化硅功率MOSFET的阈值和开关响应的辐射损伤对比]

作者：Feng H.; Yang S.; Liang X.; Sun J.; Zhang D.; Pu X.; Yu X.^*

来源：Research & Progress of Solid State Electronics, 2022, 42(5): 412-416.

• Dynamic characteristics
• Silicon carbide
• Static parameters
• Total ionizing dose

An experimental study of the dynamic and static characteristics of SiC VDMOS under different biases in a total ionizing dose radiation environment was presented in this paper. The effects of 60Co γ-ray irradiation on the static parameters (threshold voltage) and dynamic parameters (switching response) of SiC VDMOS with three bias states were compared. The experimental results show that the static parameters of the device degrade to different degrees after a certain time of 60Co γ-ray irradiation. At the same time, the turn-on delay time is shortened slightly, the turn-off delay time increases sharply, and the total switching loss increases. γ-ray irradiation degrades the static properties of the device and changes its dynamic properties at the same time, but there is a certain difference between them.

• 单位
  中国科学院; 中国科学院大学