High quantum efficiency long-/long-wave dual-color type-Ⅱ InAs/GaSb infrared detector

作者：蒋志; 孙姚耀; 郭春妍; 吕粤希; 郝宏玥; 蒋洞微; 王国伟^*; 徐应强; 牛智川^*

来源：Chinese Physics B, 2019, 28(03): 386-390.

A long-/long-wave dual-color detector with N-M-π-B-π-M-N structure was developed based on a type-Ⅱ InAs/GaSb superlattice. The saturated responsivity was achieved under low bias voltage for both channels. The device could be operated as a single detector for sequential detection and showed high quantum efficiencies. The peak quantum efficiencies of long-wavelength infrared band-1(blue channel) and long-wavelength infrared band-2(red channel) were 44% at 6.3 μm under 20 mV and 57% at 9.1 μm under-60 mV, respectively. The optical performance for each channel was achieved using a 2 μm thickness absorber. Due to the high QE, the specific detectivities of the blue and red channels reached5.0×1011 cm·Hz1/2/W at 6.8 μm and 3.1×1011 cm·Hz11/2/W at 9.1 μm, respectively, at 77 K.

• 单位
  半导体超晶格国家重点实验室; 中国科学院大学