Study of GaN-based step-doping superjunction CAVET for further improvement of breakdown voltage and specific on-resistance

作者：Mao, Wei; Wang, Haiyong; Shi, Penghao; Yang, Cui^*; Zhang, Yantao; Zheng, Xuefeng; Wang, Chong; Zhang, Jincheng; Hao, Yue

来源：Semiconductor Science and Technology, 2018, 33(2): 025005.

DOI：10.1088/1361-6641/aaa32a

• GaN-based CAVET
• step-doping superjunction
• breakdown voltage
• specific on-resistance

A novel GaN-based step-doping superjunction current-aperture vertical electron transistor (SD-SJ CAVET) with SD n-and p-pillars is proposed and demonstrated by two-dimensional numerical simulations. Compared with the conventional GaN-based SJ CAVET, the greater doping concentration and more uniform electric field distributions can be realized in SD-SJ CAVET based on the special structure features, leading to the further improvement in both breakdown voltage (BV) and specific on-resistance (R(on)A). Optimized results for SD-SJ CAVET with three doping parts in n-and p-pillars show that the increase in BV is similar to 30% and the reduction of the corresponding R(on)A can be improved from 10.6% to 31.1%, with NN, 1 (the doping concentration of the part N1 in n-pillar) decreasing from 1.5. x. 10(16) to 0.5. x. 10(16) cm(-3), compared with SJ CAVET under the same aspect ratio. And further reduction in RonA can be achieved by adding differently doped layers in n-and p-pillars without obvious deterioration in BV. This SD-SJ CAVET can be fabricated by selective area growth technology.

• 单位
  西安电子科技大学