Properties of Quantum Dot Light Emitting Diode Using NiO as Hole Transport Layer [NiO为空穴传输层的量子点发光二极管及其性能]

作者：Guo Q.-L.; Li J.-L.; He X.-H.; Xu X.-Q.

来源：Journal of Synthetic Crystals, 2018, 47(3): 556-563.

• Hole transport layer
• Nickel oxide
• Quantum dot light emitting diode(QLED)
• Solution method

NiO nanocrystals were prepared using solution method, then characterized by XRD, TEM and UPS, respectively, and finally applied to QLED with the structure of ITO/NiO/PVK/QDs/ZnO/Ag. XPS results reveal that Ni 3+ will occur within NiO crystal lattice via UV-ozone treatment, and uniformly distributed NiO films with increasing Ni 3+ concentration are obtained by means of the multiple processes combining spin coatings with UV-ozone treatment. The results indicate that the performance of the device shows a trend of gradual improvement with the increase of the number of NiO spin coating. When the number of spin coating is 4, the obtained device exhibits the best performance, i. e., the luminous intensity increases from 184 cd/m 2 to 4775 cd/m 2 , along with the maximal current efficiency of 0.54 cd/A and the maximal external quantum efficiency of 0.22%. Such efficiencies values are enhanced by over 50 times compared with those for QLED with single NiO layer.

• 单位
  华南理工大学