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摘要
<正>Most of today’s integrated circuits, known as chips or microchips, are fabricated using complementary metal–oxide–semiconductor(CMOS) technology. Conventional CMOS devices(mainly referred to as Si-based transistors) have reached their fundamental physical limits and are facing energy-efficient challenges. Therefore, it is difficult to scale them down further, primarily due to the challenges concerning short-channel effect, quantum effects,
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